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description the ps2535-1 and ps2535l-1 are opt ically coupled isolators containing a gaas light emitting diode and an npn silicon darlington connect ed phototransistor. a high withstanding voltage between the i/o, the high voltage between the collector and emitter of the transistor, and darlington transistor output enables low-current input. the ps2535-1 is in a plastic dip (dual in-line pack age) and the ps2535l-1 is lead bending type (gull-wing) for surface mount. features ? high collector to emitter voltage (v ceo = 350 v) high isolation voltage (bv = 5 000 vr.m.s.) high current transfer ratio (ctr = 1 500 % typ.) ordering number of taping product: ps2535l-1-e3, e4, f3, f4 safety standards ul approved: file no. e72422 bsi approved: no. 8221/8222 din en60747-5-2 (vde0884 pa rt2) approved (option) applications telephone, exchange equipment fax/modem data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. high collector to emitter voltage high isolation voltage multi photocoupler series ? nepoc series ? the mark ? shows major revised points. document no. pn10447ej02v0ds (2nd edition) date published march 2006 cp(k) printed in japan ? nec compound semiconductor devices, ltd. 1999, 2006 photocoupler ps2535-1,ps2535l-1
package dimensions (unit : mm) dip type (new package) lead bending type (new package) ps2535-1 top view 3.50.3 4.150.4 3.20.4 2.54 1.250.15 0.500.10 0.25 m 4.60.35 6.50.5 0 to 15? 7.62 0.25 +0.1 ?0.05 12 43 1. anode 2. cathode 3. emitter 4. collector ps2535l-1 top view 0.25 m 4.60.35 6.50.5 3.50.3 2.54 1.250.15 0.15 0.90.25 9.600.4 0.25 +0.1 ?0.05 0.1 +0.1 ?0.05 12 43 1. anode 2. cathode 3. emitter 4. collector dip type lead bending type ps2535-1 top view 4.60.5 6.50.5 3.50.3 4.150.4 3.30.5 2.54 1.250.15 0.500.10 0.25 m 0 to 15? 7.62 0.25 +0.1 ?0.05 12 43 1. anode 2. cathode 3. emitter 4. collector ps2535l-1 top view 4.60.5 6.50.5 0.25 m 3.50.3 2.54 1.250.15 0.15 0.90.25 9.600.4 0.25 +0.1 ?0.05 0.1 +0.1 ?0.05 12 43 1. anode 2. cathode 3. emitter 4. collector data sheet pn10447ej02v0ds 2 ps2535-1,ps2535l-1
marking example 2535 nl601 j n assembly lot week assembled year assembled (last 1 digit) in-house code ctr rank code no. 1 pin mark package new pkg standard pkg made in japan made in taiwan n 6 01 l l data sheet pn10447ej02v0ds 3 ps2535-1,ps2535l-1
ordering information part number order number solder plating specification packing style safety standard approval application part number *1 ps2535-1 ps2535-1-a pb-free magazine ca se 100 pcs standard products ps2535-1 ps2535l-1 ps2535l-1-a (ul, bsi approved) ps2535l-1-e3 ps2535l-1-e3-a embossed tape 1 000 pcs/reel ps2535l-1-e4 ps2535l-1-e4-a ps2535l-1-f3 ps2535l-1-f3-a embossed tape 2 000 pcs/reel ps2535l-1-f4 ps2535l-1-f4-a ps2535-1-v ps2535-1-v-a magazine case 100 pcs din en60747-5-2 ps2535l-1-v ps2535l-1-v-a (vde0884 part2) ps2535l-1-v-e3 ps2535l-1-v-e3-a embossed t ape 1 000 pcs/reel approved (option) ps2535l-1-v-e4 PS2535L-1-V-E4-A ps2535l-1-v-f3 ps2535l-1-v-f3-a embossed t ape 2 000 pcs/reel ps2535l-1-v-f4 ps2535l-1-v-f4-a *1 for the application of the safety st andard, following part number should be used. absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode forward current (dc) i f 50 ma reverse voltage v r 6 v power dissipation derating ? p d / c 0.7 mw/ c power dissipation p d 70 mw peak forward current *1 i fp 0.5 a transistor collector to emitter voltage v ceo 350 v emitter to collector voltage v eco 0.3 v collector current i c 120 ma power dissipation derating ? p c / c 2.0 mw/ c power dissipation p c 200 mw isolation voltage *2 bv 5 000 vr.m.s. operating ambient temperature t a ? 55 to +100 c storage temperature t stg ? 55 to +150 c *1 pw = 100 s, duty cycle = 1% *2 ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output pins 1-2 shorted together , 3-4 shorted together. data sheet pn10447ej02v0ds 4 ps2535-1,ps2535l-1
electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.2 1.4 v reverse current i r v r = 5 v 5 a terminal capacitance c t v = 0 v, f = 1.0 mhz 15 pf transistor collector to emitter dark current i ceo v ce = 350 v, i f = 0 ma 400 na coupled current transfer ratio (i c /i f ) *1 ctr i f = 1 ma, v ce = 2 v 400 1 500 5 500 % collector saturation voltage v ce (sat) i f = 1 ma, i c = 2 ma 1.0 v isolation resistance r i-o v i-o = 1.0 kv dc 10 11 ? isolation capacitance c i-o v = 0 v, f = 1.0 mhz 0.6 pf rise time *2 t r v cc = 5 v, i c = 10 ma, r l = 100 ? 18 s fall time *2 t f 5 *1 ctr rank n : 400 to 5 500 (%) l : 1 500 to 5 500 (%) *2 test circuit for switching time pw = 1 ms, duty cycle = 1/10 pulse input v cc v out in monitor r l = 100 ? 50 ? i f data sheet pn10447ej02v0ds 5 ps2535-1,ps2535l-1
typical characteristics (t a = 25 c, unless otherwise specified) ?50 ?25 0 25 50 75 100 10 000 100 000 1 000 100 10 1 25 50 75 100 100 80 60 40 20 0 0.7 mw/?c 2.0 mw/?c 25 50 75 100 120 140 160 180 200 220 240 100 80 60 40 20 0 100 50 10 5 1 0.5 0.1 0.7 0.9 1.1 1.3 1.5 0.8 1.0 1.2 1.4 0 ?c ?25 ?c ?50 ?c t a = +100 ?c +60 ?c +25 ?c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 10 5 1 transistor power dissipation vs. transistor power dissipation p c (mw) diode power dissipation p d (mw) ambient temperature t a (?c) ambient temperature t a (?c) forward current vs. forward current i f (ma) forward voltage v f (v) collector current vs. collector current i c (ma) collector saturation voltage v ce(sat) (v) collector to emitter voltage collector current vs. collector current i c (ma) collector to emitter voltage v ce (v) collector to emitter dark collector to emitter dark current i ceo (na) ambient temperature t a (?c) i f = 0.5 ma 1 ma 5 ma 2 ma 3 ma ctr = 1 068 % 2 290 % 4 360 % v ceo = 350 v ambient temperature diode power dissipation vs. ambient temperature forward voltage collector saturation voltage current vs. ambient temperature 1234 5 100 50 10 5 1 0 1 ma 5 ma 3 ma 2 ma i f = 0.5 ma remark the graphs indicate nominal characteristics. data sheet pn10447ej02v0ds 6 ps2535-1,ps2535l-1
v cc = 10 v, i c = 10 ma, ctr = 1 800 % 1 000 100 10 1 0.1 10 50 100 500 1000 0.1 1 0.5 10 5 40 4 000 4 500 3 500 3 000 2 500 2 000 1 500 1 000 500 0 i f = 1 ma t a = 25 ?c t a = 60 ?c 10 10 2 10 3 10 4 10 5 10 6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 t r t f t d t s ratio vs. ambient temperture normalized current transfer ambient temperature t a (?c) normalized current transfer ratio ctr forward current current transfer ratio vs. forword current i f (ma) current transfer ratio ctr (%) lord resistance switching time vs. load resistance r l ( ? ) switching time t ( s) long term ctr degradation time (hr) ctr (relative value) v ce = 2 v ?50 ?25 0 25 50 75 100 1.4 1.0 1.2 0.8 0.6 0.4 0.2 0.0 normalized to 1.0 at t a = 25 c, i f = 1 ma, v ce = 2 v remark the graphs indicate nominal characteristics. data sheet pn10447ej02v0ds 7 ps2535-1,ps2535l-1
taping specifications (in millimeters) tape direction outline and dimensions (tape) outline and dimensions (reel) ps2535l-1-e3 ps2535l-1-e4 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 4.0 0.1 0.4 5.30.1 8.00.1 7.50.1 16.00.3 10.30.1 1.5 +0.1 ?0 packing: 1 000 pcs/reel 2.00.5 r 1.0 13.00.2 21.00.8 2542.0 80.01.0 2.00.5 15.9 to 19.4 outer edge of flange 21.51.0 17.51.0 data sheet pn10447ej02v0ds 8 ps2535-1,ps2535l-1
tape direction ps2535l-1-f3 ps2535l-1-f4 outline and dimensions (tape) 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 4.0 0.1 0.4 5.30.1 8.00.1 7.50.1 16.00.3 10.30.1 1.5 +0.1 ?0 outline and dimensions (reel) packing: 2 000 pcs/reel 2.00.5 r 1.0 13.00.2 21.00.8 3302.0 1001.0 2.00.5 15.9 to 19.4 outer edge of flange 21.51.0 17.51.0 data sheet pn10447ej02v0ds 9 ps2535-1,ps2535l-1
notes on handling 1. recommended soldering conditions (1) infrared reflow soldering peak reflow temperature 260 c or below (package surface temperature) time of peak reflow temperature 10 seconds or less time of temperature higher than 220 c 60 seconds or less time to preheat temperature from 120 to 180 c 120 30 s number of reflows three flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220?c 180?c package surface temperature t (?c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260?c max. 120?c (2) wave soldering temperature 260 c or below (molten solder temperature) time 10 seconds or less preheating conditions 120 c or below (package surface temperature) number of times one (allowed to be dipped in solder including plastic mold portion.) flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron peak temperature (l ead part temperature) 350 c or below time (each pins) 3 seconds or less flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the poi nt 1.5 to 2.0 mm from the root of the lead. (b) please be sure that the temperatur e of the package woul d not be heated over 100 c. data sheet pn10447ej02v0ds 10 ps2535-1,ps2535l-1
(4) cautions fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied suddenly bet ween the photocoupler?s i nput and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. measurement conditions of current transfer ra tios (ctr), which differ according to photocoupler check the setting values before use, since the forward current conditions at ctr measurement differ according to product. when using products other than at the specified forward current, the char acteristics curves may differ from the standard curves due to ctr value variati ons or the like. theref ore, check the characte ristics under the actual operating conditions and thoroughly take variations or the like into cons ideration before use. usage cautions 1. protect against static electricity when handling. 2. avoid storage at a high te mperature and high humidity. data sheet pn10447ej02v0ds 11 ps2535-1,ps2535l-1
when the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the au thority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license . m8e 00. 4 - 0110 the information in this document is current as of march, 2006. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ? data sheet pn10447ej02v0ds 12 ps2535-1,ps2535l-1
caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. follow related laws and ordinanc es when disposing of the produc t. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (wit h a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industria l waste and household garbage, and ensure that the product is controlled (as industria l waste subject to special c ontrol) up until final disposal. do not burn, destroy, cut, crush, or chemically di ssolve the product. do not lick the product or in any way allow it to enter the mouth. nec compound semiconductor devices hong kong limited e-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-0 fax: +49-211-6503-1327 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0504 nec compound semiconductor devices, ltd. http://www.ncsd.necel.com/ e-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) sales division tel: +81-44-435-1573 fax: +81-44-435-1579 for further information, please contact ps2535-1,ps2535l-1

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